Impact of AlN interlayer on the transport properties of AlGaN/GaN heterostructures grown on silicon

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1962-1964

  Elhamri, S ^a   Mitchel, W C ^b   Berney, R ^a   Ahoujja, M ^a   Roberts, J C ^c   Rajagopal, P ^c   Cook Jr , J W ^c   Piner, E L ^c   Linthicum, K J ^c  

^a UNIVERSITY OF DAYTON   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/ALN/GAN; ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; ALLOY SCATTERING; ALN; ALN LAYERS; CARRIER DENSITY; HIGH QUALITY; LOW TEMPERATURES; SHUBNIKOV-DE HAAS OSCILLATIONS; TEMPERATURE RANGE;

GALLIUM NITRIDE; GALVANOMAGNETIC EFFECTS; SEMICONDUCTING ORGANIC COMPOUNDS; SHUBNIKOV-DE HAAS EFFECT; TRANSPORT PROPERTIES;

CARRIER MOBILITY;

EID: 77951227452     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778544     Document Type: Conference Paper

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