Ultralow- k/Cu damascene multilevel interconnects using high porosity and high modulus self-assembled porous silica

Journal of the Electrochemical Society

Volumn 157, Issue 5, 2010, Pages

  Chikaki, Shinichi ^a   Kinoshita, Keizo ^a   Kohmura, Kazuo ^b   Tanaka, Hirofumi ^b   Soda, Eiichi ^a   Suzuki, Takamasa ^a   Seino, Yutaka ^c   Hata, Nobuhiro ^c   Saito, Shuichi ^a   Kikkawa, Takamaro ^d  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b MITSUI CHEMICALS INC   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CU DAMASCENE; DIELECTRIC CONSTANTS; HIGH ELASTIC MODULUS; HIGH ELECTRIC FIELDS; HIGH POROSITY; INDUCED DAMAGE; K-VALUES; LOW-K FILMS; METALIZATIONS; MULTI LEVEL INTERCONNECTS; POROUS SILICA; POROUS SILICA FILMS; SELF-ASSEMBLED; SIDEWALL PROTECTION; SILYLATIONS; TIME-DEPENDENT DIELECTRIC BREAKDOWN; TRENCH ETCHING; ULTRALOW-K; ULTRALOW-K FILMS; UV IRRADIATION;

DIELECTRIC PROPERTIES; ELECTRIC FIELDS; SILICA;

COPPER;

EID: 77951161935     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3355891     Document Type: Article

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