Packaging and characterization of silicon carbide thyristor power modules

2009 IEEE 6th International Power Electronics and Motion Control Conference, IPEMC '09

Volumn , Issue , 2009, Pages 264-268

  Ang, Simon S ^a   Tao, T ^a   Saadeh, O S ^a   Johnson, E ^a   Rowden, B ^a   Balda, J C ^a   Mantooth, A ^a  

^a University of Arkansas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER HEAT SPREADER; COPPER SUBSTRATES; DIRECT BOND; HIGH-VOLTAGES; ON STATE CURRENT; PARALLEL OPERATIONS; POWER MODULE; POWER SEMICONDUCTOR DEVICES; QUARTER-CYCLE; SERIES RESISTANCES; SIC THYRISTORS; THERMAL MATCHING;

CHIP SCALE PACKAGES; ELECTRIC SWITCHGEAR; ENERGY RESOURCES; MOTION CONTROL; MOTION PLANNING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; THYRISTORS;

POWER ELECTRONICS;

EID: 77951116422     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPEMC.2009.5157396     Document Type: Conference Paper

References (14)

1. B. Jayant Baliga, Silicon Carbide Power Devices, World Scientific Publishing Co., 2005.
2. A. Agarwal, B. Damsky, J. Richmond, S. Krishnaswami, C. Capell, S. H. Ryu, and J. W. Palmour , "The first demonstration of the 1 cm x 1 cm SiC Thyristor chip," Proc. of 17th International Symposium on Power Semiconductor Devices and IC's, pp. 195-198, 2005.
3. W. J. Choyke and G. Pencel. Physical properties of SiC, MRS Bulletin, March 1997.
4. T. Funaki, J. C. Balda, J. Junghan, A. S. Kashyap, F. D. Barlow, H. A. Mantooth, T. Kimoto, T. Hikihara, "Power Conversion with SiC Devices at Extremely High Ambient Temperatures", IEEE Transactions on Power Electronics, Vol. 22, No. 4, pp. 1321-1329, July 2007.
5. K. Jarrendahl, and R. Davis, "Material Properties and Characterization of SiC, Semiconductors and Semimetals," in SiC Materials and Devices, Vol. 52, Y.S. Park, (ed.), 1998.
6. R. Wayne Johnson, and John Williams, "SiC Power Device Packaging Technologies for 300 to 350°C Applications," Materials Science Forum, Vol. 483-485, pp.785-790, 2004.
7. Tom Martin, and Terry Martin, "High Temperature Aluminum Nitride Packaging", Third International High Temperature Conference, Vol. 2, pp. 95-100, June, 1996.
8. th International High Temperature Electronics Conference, Albuquerque, NM, IEEE, Piscataway, 1998 pp. 103-108.
9. L.Y. Chen, R.S. Okojie, P.G. Neudeck, G.W Hunter, and S.T Lin, "Material System For Packaging 500°C Microsystem", Proceedings of Material Research Society Symposium, Vol. 682E, 2001, pp. N4.3.1-N4.3.12.
10. L. Zhigang, R.J. Yoon, "An AlN Based High temperature Package for SiC Devices: Materials and Processing," International Symposium on Advanced Packaging Materials: Processes, Properties, and Interfaces, pp. 156-159, 16-18 March, 2005.
11. J. S. Bowers, D.C. Hopkins, W.J. Sarjeant, "Packaging Issues for Next Generation High Voltage, High Temperature Power Electronics Modules," Twelfth Annual Applied Power Electronics Conference and Exposition, Atlanta, GA, pp. 413-418, 1997.
12. E. Savrun, and C. Toy, "An Aluminum Nitride Package for 600°C and Beyond",High Temperature Electronics Conference, HITEC, pp. 265-268, Albuquerque, NM, 14-18 June, 1998.
13. http://www.uark.edu/ua/artp/pressnews.html.
14. th Power Electronics Specialists Conference, pg. 4762-4765, 2008.