An aluminum nitride package for 600°C and beyond

1998 4th International High Temperature Electronics Conference, HITEC 1998

Volumn , Issue , 1998, Pages 265-268

  Savrun, E ^a   Toy, C ^a  

^a Sienna Technologies Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM NITRIDE; III-V SEMICONDUCTORS; METALLIZING; METALS; NITRIDES; REFRACTORY MATERIALS; RESISTORS; SILICON ALLOYS; SILICON CARBIDE; SUBSTRATES; THICK FILMS;

ALN SUBSTRATES; ALUMINUM NITRIDE (ALN); BOND PAD; BRAZING ALLOYS; CHEMICAL COMPATIBILITY; PULL STRENGTH; SHEET RESISTIVITY; TUNGSTEN (W);

THIN FILMS;

EID: 33750940728     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HITEC.1998.676801     Document Type: Conference Paper

References (3)

1. Bratcher, M., Yoon, R. J., and Whitworth, B. (1996) "Aluminum Nitride Package for High Temperature applications", Trans. Third International High Temperature Electronics Conference.
2. Nakahashi, M., Shirokane, M., and Takeda (1987) "Characterization of Nitride Ceramic-Metal Joints Brazed with Titanium Containing Alloys", Proc. British Ceram. Soc., V-38, p. 25.
3. Savrun, E. et al. (1995) "Aluminum Nitride Package for High-Temperature Electronics", Proc. Workshops on High Temperature Power Electronics for Vehicles, p. 92.