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PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn , Issue , 2008, Pages 4762-4765

An analysis of paralleled SiC bipolar devices

(6) Johnson, E a Saadeh, O S a Mantooth, H A a Balda, J C a Ang, S S a Agarwal, A K b

a University of Arkansas (United States)

b Arkansas Power Electronics International Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC SWITCHGEAR; LASERS; POWER ELECTRONICS; RESISTORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SILICON; SILICON CARBIDE; THYRISTORS;

BIPOLAR DEVICES; BLOCKING VOLTAGES; CURRENT SHARING; DISTRIBUTION SYSTEMS; GATE CONTROL; HIGH-POWER APPLICATIONS; NEGATIVE TEMPERATURES; ON-STATE RESISTANCE; POWER LOSSES; SERIES RESISTORS; SIC DEVICES; SIC THYRISTORS; SWITCHING SPEEDS; THERMAL RUNAWAY; VOLTAGE DROPS;

SEMICONDUCTOR DEVICES;

EID: 52349085259 PISSN: 02759306 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/PESC.2008.4592723 Document Type: Conference Paper

Times cited : (5)

References (9)

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2
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3
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- W. J. Choyke and G. Pencel. Physical properties of SiC, MRS Bulletin, March 1997.
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4
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- Material Properties and Characterization of SiC, Semiconductors and Semimetals
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5
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8
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