Development toward wafer-scale graphene RF electronics

2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers

Volumn , Issue , 2010, Pages 1-3

  Moon, J S ^a   Curtis, D ^a   Hu, M ^a   Wong, D ^a   Campbell, P M ^b   Jernigan, G ^b   Tedesco, J ^b   VanMil, B ^b   Myers Ward, R ^b   Eddy Jr , C ^b   Gaskill, D K ^b   Robinson, J ^c   Fanton, M ^c   Asbeck, P ^d  

^a Hughes Aircraft Co   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Graphene; High K dielectric; MOSFET

Indexed keywords

ATOMIC LAYER DEPOSITED; DEVICE FABRICATIONS; ELECTRON CARRIER DENSITY; EPITAXIAL GRAPHENE; GATE DIELECTRIC LAYERS; HIGH-K DIELECTRIC; METAL GATE; MOS-FET; OHMIC METALS; RF ELECTRONICS; RF PERFORMANCE; ROOM TEMPERATURE; SOURCE AND DRAINS; WAFER SCALE;

FABRICATION; GATE DIELECTRICS; GATES (TRANSISTOR); GRAPHENE; GRAPHITE; INTEGRATED CIRCUITS; MESFET DEVICES; MOSFET DEVICES; RADIOFREQUENCY SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON WAFERS;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 77951062487     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2010.5422991     Document Type: Conference Paper

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