Deep gireenn emissnion at 570nm from InGaN/GaN MQW active region growm on bulk AIN substrate

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5941, Issue , 2005, Pages 1-8

  Shahedipour Sandvik, F ^a   Grandusky, J R ^a   Jamil, M ^a   Jindal, V ^a   Schujman, S B ^b   Schowalter, L J ^b   Liu, R ^c   Ponce, F A ^c   Cheung, M ^d   Cartwright, A ^d  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b Crystal IS Inc   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

^d NEW YORK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL FLUCTUATION; OPTICAL SPECTROSCOPY; POWER DECAY;

COMPOSITION; GALLIUM NITRIDE; INTERFACES (MATERIALS); LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

INDIUM COMPOUNDS;

EID: 31944441901     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.617829     Document Type: Conference Paper

References (19)

1. M. Kalloniatis, and C. Luu, "Psychophysics of vision', http://webvision.med.utah.edu/psychl.html
2. www.LightEmittingDiode-org
3. X. A. Cao, J. A. Teetsov, F. Shahedipour-Sandvik, S. D. Arthur, J. Crystal Growth, 1-3 (2004) 172.
4. S. Chichibu, K. Wada, S. Nakamura, Appl. Phys. Lett. 71 (1997) 2346.
5. G. Pzina, J. P. Bergman, B. Monemar, T. Takeuchi, H. Amano, I. Akasaki, J. Appl. Phy. 88 (2000) 2677.
6. Y. Narukawa et al. Phys. Rev. B 55 (1997) R1938.
7. H. Sato, T. Sugahara, Y. Naoi, and S. Sakai, Jpn. J. Appl. Phys. 37, 2013 (1998)
8. T. Sugahara, S. Sakai, M. Lachab, R. S. Fareed, S. tottori, and T. Wang, Phys. Stat. Sol. B, 216, 273 (1991)
9. Crystal IS Inc, Watervliet, NY
10. Y. Sun, Y.-H. Cho, E.-K. Suh, H. J. Lee, R. J. Cho, and Y. B. Hahn, Appl. Phys. Lett. 84, 49 (2004)
11. G. Eliseev, P. Perlin, J. Lee, and M. Osinski, Appl. Phys. Lett. 71, 569 (1997).
12. F. Shahedipour-Sandvik, M. Jamil, K. Topol, J. Grandusky, and K. Dunn, submitted to MRS Internet Journal of Nitride Semiconductor Research (2005);
13. and F. A. Ponce, S. Srinivasan, A. Bell, L. Geng, R. Liu, M. Stevens, J. Cai, H. Omiya, H. Marui, and S. Tanaka, Phys. Stat. Sol. b 240, 273 (2003)
14. M. Cheung, G. Namkoong, M. Furis, F. Chen, A. N. Cartwright, W. A. Doolittle, and A. Brown, in Time resolved optical studies of InGaN layers grown on LGO, Boston, MA, United States, 2002 (Materials Research Society Symposium - Proceedings, v 743 2002.), p. 659-664.
15. S. F. Chichibu, T. Onuma, T. Aoyama, K. Nakajima, P. Ahmet, T. Chikyow, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, Journal of Vacuum Science & Technology B 21, 1856-1862 (2003)
16. M. Pophristic, F. H. Long, C. Tran, I. T. Ferguson, and R. F. Karlicek, Journal of Applied Physics 86, 1114-1118 (1999).
17. M. Pophristic, F. H. Long, C. Tran, and I. T. Ferguson, MRS Internet Journal of Nitride Semiconductor Research 5, art. no.-W11.58 (2000).
18. Y. Ando, et al., Phys Status Solidi B, 230, 15 (2002)
19. H. E. Roman and L. Pavesi, J Phys-Condens Mat, 8, 5161 (1996)