Air-stable n-channel single-crystal field-effect transistors

Japanese Journal of Applied Physics

Volumn 49, Issue 1 Part 2, 2010, Pages

  Yamagishi, Masakazu ^a   Tominari, Yoshihiro ^a   Uemura, Takafumi ^a   Yamada, Koichi ^b   Takeya, Jun ^a,c  

^a OSAKA UNIVERSITY   (Japan)

^b CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AIR-STABLE; AMBIENT ATMOSPHERE; FIELD EFFECTS; FIELD-EFFECT DEVICES; HIGH MOBILITY; N-CHANNEL; ORGANIC SEMICONDUCTOR; ORGANIC TRANSISTOR; POLYCRYSTALLINE THIN FILM TRANSISTORS; SEMICONDUCTOR CRYSTALS; SINGLE-CRYSTAL TRANSISTORS; SOLID DIELECTRIC; TETRACYANOQUINODIMETHANE; THRESHOLD GATE VOLTAGE;

ELECTRON AFFINITY; FIELD EFFECT TRANSISTORS; SINGLE ELECTRON TRANSISTORS; THIN FILM TRANSISTORS; THRESHOLD LOGIC;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 77950819110     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.01AB05     Document Type: Article

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