Simulation technique of heating by contact resistance for ESD protection device

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2002-January, Issue , 2002, Pages 119-122

  Matsuzawa, K ^a   Kawashima, H ^a   Matsuhashi, T ^a   Yasuda, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Conductivity; Contact resistance; Electrostatic discharge; Heat treatment; Lattices; Protection; Resistance heating; Silicides; Temperature distribution; Thermal resistance

Indexed keywords

CONTACT RESISTANCE; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; HEAT RESISTANCE; HEAT TREATMENT; INTELLIGENT SYSTEMS; SEMICONDUCTOR DEVICES; SILICIDES; TEMPERATURE DISTRIBUTION;

DEVICE SIMULATIONS; ESD PROTECTION DEVICES; POWER DENSITIES; PROTECTION; RESISTANCE-HEATING; SELF-HEATING; SIMULATION TECHNIQUE; THERMAL IMMUNITY;

MONTE CARLO METHODS;

EID: 77950797489     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2002.1034531     Document Type: Conference Paper

References (7)

1. P. Galy, V. Berland, B. Foucher, I. Lombaert-Valot, A. Guilhaume, J.P. Chante, S. Dufrenne, and S. Bardy, Microelectron. Reliab., vol. 40, no.8-10, p. 1473, 2000.
2. W. Fichtner K. Esmark, and W. Stadler, IEDM2001, 14-1
3. K. Matsuzawa, K. Uchida, and A. Nishiyama, IEEE Trans. Electron Devices, vol. 47, p. 103, 2000.
4. K. Matsuzawa, H. Kawashima, and K. Ouchi, SISPAD2000, p. 237.
5. K. Matsuzawa, K. Uchida, and A. Nishiyama, IEICE Trans. Electron., vol.E83-C, p. 1212, 2000.
6. H.I. Liu, J.A. Burns, C.L. Keast, and P.W. Wyatt, IEEE Trans. Electron Devices, vol.45, p.1099, 1998.
7. B.-Y. Tsui, M.-D. Wu, and T.-C. Gan, IEEE Electron Device Letters, vol. 22, 463, 2001.