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Volumn E83-C, Issue 8, 2000, Pages 1212-1217

Monte Carlo simulation of Sub-O.l/xm devices with schottky contact model

Author keywords

Hydrodynamic; Monte carlo; Schottky contact; Velocity dispersion

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; DIFFUSION; ELECTRON TUNNELING; IMPURITIES; INTERFACES (MATERIALS); MONTE CARLO METHODS; OHMIC CONTACTS; TEMPERATURE; THERMIONIC EMISSION;

EID: 0034251025     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (6)

References (13)
  • 1
    • 0041627391 scopus 로고    scopus 로고
    • Current fluctuation characteristic of sub-0.1 micron device structures: A Monte Carlo study
    • References [1] N. Sano, K. Natori, K. Matsuzawa, and M. Mukai, "Current fluctuation characteristic of sub-0.1 micron device structures: A Monte Carlo study," Jpn. J. Appl. Phys. 2, Lett., vol.38, p.L531, 1999.
    • (1999) Jpn. J. Appl. Phys. 2, Lett. , vol.38
    • Sano, N.1    Natori, K.2    Matsuzawa, K.3    Mukai, M.4
  • 2
    • 85056911965 scopus 로고
    • Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?
    • D.J. Frank, S.E. Laux, and M.V. Fischetti, "Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?," IEDM Tech. Dig., p.553, 1992.
    • (1992) IEDM Tech. Dig. , pp. 553
    • Frank, D.J.1    Laux, S.E.2    Fischetti, M.V.3
  • 4
    • 0030109241 scopus 로고    scopus 로고
    • Monte Carlo analysis of a Schottky diode with an automatic space-variable charge algorithm
    • M.J. Martin, T. Gonzalez, D. Pardo, and J.E. Velazquez, "Monte Carlo analysis of a Schottky diode with an automatic space-variable charge algorithm," Semicond. Sei. Tcchnol., vol.11, p.380, 199G.
    • (1999) Semicond. Sei. Tcchnol. , vol.11 , pp. 380
    • Martin, M.J.1    Gonzalez, T.2    Pardo, D.3    Velazquez, J.E.4
  • 7
    • 33746109257 scopus 로고    scopus 로고
    • Simulations of Schottky barrier diodes and tunnel transistors
    • K. Matsuzawa, K. Uchida, and A. Nishiyama, "Simulations of Schottky barrier diodes and tunnel transistors," I\VCE-G, P-1G3, 1998.
    • (1998) I\VCE-G
    • Matsuzawa, K.1    Uchida, K.2    Nishiyama, A.3
  • 8
    • 33746108903 scopus 로고
    • Monte Carlo simulation of contacts in submicron devices
    • P. Lugli, U. Ravaioli, and D.K. Ferry, "Monte Carlo simulation of contacts in submicron devices," AIP Conf. Proc., no.122, p.162, 1984.
    • (1984) AIP Conf. Proc. , Issue.122 , pp. 162
    • Lugli, P.1    Ravaioli, U.2    Ferry, D.K.3
  • 9
    • 0014809769 scopus 로고
    • Reverse current-voltage characteristics of mctal-silicide Schottky diodes
    • J.M. Andrews and M.P. Lepsclter, "Reverse current-voltage characteristics of mctal-silicide Schottky diodes," SolidState Electron., vol.13, p.1011, 1970.
    • (1970) SolidState Electron. , vol.13 , pp. 1011
    • Andrews, J.M.1    Lepsclter, M.P.2
  • 10
    • 0023307708 scopus 로고
    • Boundary limited high field transport in ultra small devices
    • A. Al-Omar and J.P. Krusius, "Boundary limited high field transport in ultra small devices," COMPEL, vol.6, p.3, 1987.
    • (1987) COMPEL , vol.6 , pp. 3
    • Al-Omar, A.1    Krusius, J.P.2
  • 12
    • 36149028172 scopus 로고
    • Theory of impurity scattering in semiconductors
    • E. Conwell and V.F. \Veisskopf, "Theory of impurity scattering in semiconductors," Phys. Rev., vol.77, p.388, 1950
    • (1950) Phys. Rev.,. , vol.77 , pp. 388
    • Conwell, E.1    Weisskopf, V.F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.