Impact of silicide formation on the resistance of common source/drain region

IEEE Electron Device Letters

Volumn 22, Issue 10, 2001, Pages 463-465

  Tsui, Bing Yue ^a,b   Wu, Ming Da ^b   Gan, Tian Choy ^b  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Contact resistance; Silicide; Simulation

Indexed keywords

CONTACT RESISTANCE;

COMPUTER SIMULATION; DIFFUSION; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0035475026     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.954912     Document Type: Article

References (6)

1. An optimally designed process for submicron MOSFETs
2. A transmission line model for silicided diffusions: Impact on the performance of VLSI circuits
3. Series resistance of self-aligned silicided source/drain structure
4. Analysis of the gate-voltage-dependent series resistance of MOSFETs
5. Models for contacts to planar devices