Direct piezoelectric properties of Mn-doped ZnO epitaxial films

Japanese Journal of Applied Physics

Volumn 49, Issue 2 Part 1, 2010, Pages

  Yoshimura, Takeshi ^a   Sakiyama, Haruka ^a   Oshio, Takeshi ^a   Ashida, Atsushi ^a   Fujimura, Norifumi ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED STRAIN; EFFECTIVE TRANSVERSE PIEZOELECTRIC COEFFICIENT; INDUCED CHARGES; MN-DOPED ZNO; MN-DOPING; PIEZOELECTRIC PROPERTY; PIEZOELECTRIC RESPONSE; PULSE LASER DEPOSITION; SPONTANEOUS POLARIZATIONS; SUBSTRATE BENDING; THEORETICAL VALUES; ZNO FILMS;

DOPING (ADDITIVES); EPITAXIAL GROWTH; MANGANESE; MANGANESE OXIDE; METALLIC FILMS; PIEZOELECTRICITY; PULSED LASER APPLICATIONS; ZINC OXIDE;

EPITAXIAL FILMS;

EID: 77950786774     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.021501     Document Type: Article

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