Electron transport properties of Zn0.88 Mn0.12 O/ZnO modulation-doped heterostructures

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1760-1764

  Masuko, K ^a   Ashida, A ^a   Yoshimura, T ^a   Fujimura, N ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELECTRON ABSORPTION; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; MANGANESE; TRANSPORT PROPERTIES; ZINC; ZINC OXIDE;

BARRIER LAYERS; CARRIER CONFINEMENTS; GROWTH MODE CHANGE; GROWTH MODES; HETERO INTERFACES; HETEROSTRUCTURES; MODULATION-DOPED; SINGLE-CRYSTAL SUBSTRATES; TWO-DIMENSIONAL GROWTH; ZNO;

GRAIN GROWTH;

EID: 70350714489     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3093916     Document Type: Conference Paper

References (24)

1. A. Ohtomo and H. Y. Wang, Nature (London) 427, 423 (2004).
2. A. Tsukazaki, A. Ohtomo, T. Kita, Y. Ohno, H. Ohno, and M. Kawasaki, Science 315, 1388 (2007).
3. A. Gozar, G. Logvenov, L. Fitting Kourkoutis, A. T. Bollinger, L. A. Giannuzzi, D. A. Muller, and I. Bozovic, Nature (London) 455, 782 (2008).
4. A. Brinkman, Nature Mater. 6, 493 (2007).
5. A. Tsukazaki, Appl. Phys. Express 1, 055004 (2008).
6. J. Nishii, A. Ohtomo, K. Ohtani, H. Ohno, and M. Kawasakai, Jpn. J. Appl. Phys., Part 2 44, L1193 (2005).
7. S. Sasa, M. Ozaki, K. Koike, M. Yano, and M. Inoue, Appl. Phys. Lett. 89, 053502 (2006).
8. K. Koike, Jpn. J. Appl. Phys., Part 2 46, L865 (2007).
9. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).
10. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
11. S. Ghosh, V. Sih, W. H. Lau, D. D. Awschalom, S.-Y. Bae, S. Wang, S. Vaidya, and G. Chapline, Appl. Phys. Lett. 86, 232507 (2005).
12. T. Edahiro, N. Fujimura, and T. Ito, J. Appl. Phys. 93, 7673 (2003).
13. G. Blatter and F. Greuter, Phys. Rev. B 33, 3952 (1985).
14. A. Ohtomo, H. Kimura, K. Saito, T. Makino, Y. Segawa, H. Koinuma, and M. Kawasaki, J. Cryst. Growth 214-215, 284 (2000).
15. K. Masuko, H. Sakiyama, A. Ashida, T. Yoshimura, and N. Fujimura, Phys. Status Solidi C 5, 3107 (2008).
16. K. Masuko, A. Ashida, T. Yoshimura, and N. Fujimura, J. Appl. Phys. 103, 043714 (2008).
17. K. Masuko, A. Ashida, T. Yoshimura, and N. Fujimura, J. Magn. Magn. Mater. 310, e711 (2007).
18. M. Nakayama, H. Tanaka, K. Masuko, T. Fukushima, A. Ashida, T. Yoshimura, and N. Fujimura, Appl. Phys. Lett. 88, 241908 (2006).
19. K. Masuko, A. Ashida, T. Yoshimura, and N. Fujimura, J. Appl. Phys. 103, 07D124 (2008).
20. A. Kobayashi, H. Fujioka, J. Ohta, and M. Oshima, Jpn. J. Appl. Phys., Part 2 43, L53 (2004).
21. H.-J. Kon, T. Yao, Y. Chen, and S.-K. Hong, J. Appl. Phys. 92, 4354 (2002).
22. S. F. Chichibu, Semicond. Sci. Technol. 20, S67 (2005).
23. T. Oshio, K. Masuko, A. Ashida, T. Yoshimura, and N. Fujimura, J. Appl. Phys. 103, 093717 (2008).
24. T. Nagata, A. Ashida, N. Fujimura, and T. Ito, Jpn. J. Appl. Phys., Part 1 41, 6916 (2002).