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Volumn 518, Issue 14, 2010, Pages 3646-3649
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Effects of Laser in situ annealing on crystal quality of NiSi film grown on Si(001) substrate
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Author keywords
Electron beam evaporation; Laser annealing; Nickel silicide; NiSi; Raman spectroscopy
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Indexed keywords
CRYSTAL QUALITIES;
ELECTRON BEAM EVAPORATION;
IN-SITU ANNEALING;
LASER ANNEALING;
LASER POWER;
NICKEL SILICIDE;
NISI FILMS;
SI (001) SUBSTRATE;
STRUCTURAL PHASE TRANSITION;
ANNEALING;
ELECTRON BEAMS;
EVAPORATION;
NICKEL ALLOYS;
PHASE TRANSITIONS;
RAMAN SCATTERING;
RAMAN SPECTROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SILICIDES;
SILICON;
SUBSTRATES;
SUPERCONDUCTING FILMS;
THIN FILMS;
CRYSTAL ORIENTATION;
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EID: 77950545100
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.09.084 Document Type: Article |
Times cited : (5)
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References (15)
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