Characterization of titanium silicide by Raman spectroscopy for submicron IC processing

Microelectronic Engineering

Volumn 43-44, Issue , 1998, Pages 611-617

  Lim, E H ^a   Karunasiri, G ^a   Chua, S J ^a   Shen, Z X ^a   Wong, H ^b   Pey, K L ^b   Lee, K H ^b   Chan, L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Phase transformation; Raman spectroscopy; SALICIDE; TiSi2

Indexed keywords

EID: 0012591775     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00234-2     Document Type: Article

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