Electroless deposition of bismuth on Si(111) wafer from hydrogen fluoride solutions

Thin Solid Films

Volumn 518, Issue 14, 2010, Pages 3690-3693

  Romann, T ^a   Anderson, E ^a   Kallip, S ^a   Mandar H ^a   Matisen, L ^a   Lust, E ^a  

^a UNIVERSITY OF TARTU   (Estonia)

Author keywords

Atomic Force Microscopy; Bismuth nanoparticles; Electroless deposition; Photoluminescence; Porous silicon; Thin films; X ray diffraction; X ray Photoelectron Spectroscopy

Indexed keywords

AQUEOUS SOLUTIONS; BI FILMS; BI-LAYER; BISMUTH NANOPARTICLES; DEPOSITION TIME; ELECTROLESS DEPOSITION; HYDROGEN FLUORIDE; RESISTIVITY MEASUREMENT; SI (1 1 1); SILICON CHIP;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ATOMS; BISMUTH; CHEMICAL VAPOR DEPOSITION; DEPOSITION; HYDROFLUORIC ACID; NANOPARTICLES; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTOLUMINESCENCE; PHOTONS; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THIN FILMS; X RAY DIFFRACTION; X RAYS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77950531909     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.007     Document Type: Article

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