Surface photovoltage characterization of sol-gel derived Bi4Ti3O12 ferroelectric thin film on F-doped SnO2 conducting glass

Chemical Physics Letters

Volumn 488, Issue 1-3, 2010, Pages 50-53

  Wang, W C ^a   Zheng, H W ^a   Liu, X Y ^a   Liu, X S ^a   Gu, Y Z ^a   Zhang, H R ^a   Zhang, W F ^a  

^a Department of Physics   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING GLASS; CONDUCTIVE GLASS; DC BIAS VOLTAGE; FERROELECTRIC POLARIZATION; FLUORINE DOPED TIN OXIDE; NEGATIVE FIELDS; POSITIVE FIELDS; RESPONSE INTENSITY; SOL-GEL TECHNOLOGY; SURFACE PHOTOVOLTAGES; ZERO BIAS;

FERROELECTRIC THIN FILMS; FLUORINE; GELS; GLASS; LARGE SCALE SYSTEMS; LITHIUM COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; SUBSTRATES; SURFACE PROPERTIES; TIN; TITANIUM COMPOUNDS;

FERROELECTRICITY;

EID: 77950516123     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2010.01.056     Document Type: Article

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