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Applied Physics Express

Volumn 1, Issue 11, 2008, Pages 1111021-1111023

Fabrication of an InAIN/AIGaN/AIN/GaN heterostructure with a flat surface and high electron mobility

(3) Hiroki, Masanobu a Maeda, Narihiko a Kobayashi, Takashi a,b

a NTT CORPORATION (Japan)

b NTT Advance Technology Corporation

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRON MOBILITY; INSTRUMENT SCALES; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS;

ALGAN LAYERS; CONVENTIONAL STRUCTURES; FLAT SURFACES; HETEROSTRUCTURE; HIGH ELECTRON MOBILITIES; METAL ORGANIC VAPOR-PHASE EPITAXIES; NEW STRUCTURES; RMS ROUGHNESSES; ROOT MEAN SQUARES; UNDERLAYER;

SURFACE MORPHOLOGY;

EID: 57649090891 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.1.111102 Document Type: Article

Times cited : (11)

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