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Volumn 19, Issue 5-6, 2010, Pages 413-417
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Extreme insulating ultrathin diamond films for SOD applications: From coalescence modelling to synthesis
c
CEA GRENOBLE
(France)
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Author keywords
Chemical vapor deposition (CVD); Coalescence modelling; Diamond; Dielectrical properties; Silicon on insulator (SOD); Thin films
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Indexed keywords
BURIED LAYER;
DIAMOND LAYERS;
DIAMOND MATERIALS;
DIAMOND NANOCRYSTALS;
DIELECTRICAL PROPERTIES;
ELECTRICAL RESISTIVITY;
FULLY DEPLETED;
GROWTH PROCESS;
HIGH THERMAL CONDUCTIVITY;
INSULATING PROPERTIES;
LINEAR GROWTH;
NUCLEATION DENSITIES;
POLYCRYSTALLINE DIAMOND FILMS;
PROCESSING TECHNOLOGIES;
SILICON ON INSULATOR;
SILICON-ON-INSULATOR (SOD);
SURFACE COVERAGES;
ULTRA-THIN;
CHEMICAL VAPOR DEPOSITION;
COALESCENCE;
DEPOSITION;
DIAMONDS;
ELECTRIC CONDUCTIVITY;
FILM GROWTH;
INSULATION;
MATHEMATICAL MODELS;
MICROSENSORS;
NUCLEATION;
ULTRATHIN FILMS;
DIAMOND FILMS;
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EID: 77950368330
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/j.diamond.2010.01.018 Document Type: Article |
Times cited : (21)
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References (16)
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