Electrical properties of [1 0 0]-oriented CVD diamond film

Solid-State Electronics

Volumn 49, Issue 6, 2005, Pages 1044-1048

  Su, Qingfeng ^a   Lu, Jinfang ^b   Wang, Linjun ^a   Liu, Jianmin ^a   Ruan, Jianfeng ^a   Cui, Jiangtao ^a   Shi, Weimin ^a   Xia, Yiben ^a  

^a SHANGHAI UNIVERSITY   (China)

^b TONGJI UNIVERSITY   (China)

Author keywords

1 0 0 oriented growth; Diamond films; Electrical properties; HFCVD

Indexed keywords

ALUMINUM; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; HOLE MOBILITY; HYDROGEN; INTERFACIAL ENERGY; NATURAL FREQUENCIES; PHOTOCURRENTS; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY;

[100]-ORIENTED GROWTH; CRYSTAL QUALITY; HFCVD; X-RAY IRRADIATION;

DIAMOND FILMS;

EID: 18844365124     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.02.007     Document Type: Article

References (19)

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