Study of the CVD process sequences for an improved control of the Bias Enhanced Nucleation step on silicon

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 9, 2007, Pages 2854-2859

  Saada, S ^a   Arnault, J C ^b   Tranchant, N ^a   Bonnauron, M ^a   Bergonzo, P ^a  

^a DIF   (France)

^b CEA SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS ENHANCED NUCLEATION (BEN); REPRODUCIBILITY; RESIDENCE TIME DISTRIBUTION (RTD);

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; METHANE; NUCLEATION; PARAMETER ESTIMATION; STABILIZATION;

SILICON;

EID: 34548784457     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200776339     Document Type: Conference Paper

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