Comments on "High performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm"

IEEE Electron Device Letters

Volumn 29, Issue 10, 2008, Pages 1085-1086

  Thayne, Iain G ^a   Hill, Richard J W ^a   Moran, David A J ^a   Kalna, Karol ^a   Asenov, Asen ^a   Passlack, Matthias ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Electron beam lithography; Semiconductor device fabrication; Semiconductor device measurements; Semiconductor device metallization; Semiconductor devices

Indexed keywords

EID: 54749127397     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2002752     Document Type: Note

References (22)

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