RBSOA study of high voltage SiC bipolar devices

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2009, Pages 263-266

  Wang, Jun ^a   Huang, Alex Q ^a   Baliga, B Jayant ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE BREAKDOWN; BIPOLAR DEVICE; HIGH VOLTAGE; HIGH-VOLTAGE SWITCHING; N-P-N TRANSISTORS; NUMERICAL SIMULATION; POWER DENSITIES; REVERSE BIASED SAFE OPERATING AREAS; SIC DEVICES; SIC EMITTER; SIC MATERIALS; SWITCHING APPLICATIONS;

COMPUTER SIMULATION; ELECTRIC INSULATORS; ELECTRIC SWITCHGEAR; ELECTRICITY; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; THYRISTORS;

SILICON CARBIDE;

EID: 77950135597     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2009.5158052     Document Type: Conference Paper

References (14)

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