A 13 kV 4H-SiC n-channel IGBT with Low Rdiff, on and fast switching

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 1183-1186

  Das, Mrinal K ^a   Zhang, Qingchun ^a   Callanan, Robert ^a   Capell, Craig ^a   Clayton, Jack ^a   Donofrio, Matthew ^a   Haney, Sarah ^a   Husna, Fatima ^a   Jonas, Charlotte ^a   Richmond, James ^a   Sumakeris, Joseph J ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

High temperature; High voltage; IGBT; MOSFET

Indexed keywords

SILICON CARBIDE; TEMPERATURE;

BLOCKINGS; FAST SWITCHING; HIGH POWER; HIGH-VOLTAGES; HIGHEST TEMPERATURE; LOWEST R; MOS-FET; MOSFETS; N-CHANNEL; SIC MATERIALS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 63849275960     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.1183     Document Type: Conference Paper

References (3)

1. S.-H. Ryu, S. Krishnaswami, B. Hull, J. Richmond, A. Agarwal, and A. Hefner, ISPSD (2006).
2. Q. Zhang, C. Jonas, B. Heath, M. Das, S.-H. Ryu, A. Agarwal, and J. Palmour, Mater. Sci. Forum, Vol. 556-557 (2007) p. 771.
3. M.K. Das, Mater. Sci. Forum, Vol. 457-460 (2004) p. 1275.