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Volumn 47, Issue 4, 2003, Pages 727-739

Analysis of the turn-off failure mechanism of silicon power diode

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FAILURE ANALYSIS; ISOTHERMS;

EID: 0037392560     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00328-3     Document Type: Article
Times cited : (15)

References (9)
  • 7
    • 0003547182 scopus 로고    scopus 로고
    • TMA, Sunnyvale, CA, February
    • Medici User's Manual, TMA, Sunnyvale, CA, February 1997.
    • (1997) Medici User's Manual
  • 8
    • 0032598918 scopus 로고    scopus 로고
    • A physics-based model for the avalanche ruggedness of power diodes
    • Hurkx G.A.M., Koper N. A physics-based model for the avalanche ruggedness of power diodes. 1999;ISPSD. 169-72.
    • (1999) ISPSD , pp. 169-172
    • Hurkx, G.A.M.1    Koper, N.2
  • 9
    • 0030164693 scopus 로고    scopus 로고
    • Brief analysis of the inductive turn-off of double gate MOS controlled thyristors
    • Huang A.Q. Brief analysis of the inductive turn-off of double gate MOS controlled thyristors. IEEE Trans. Electron Dev. 43(6):1996.
    • (1996) IEEE Trans. Electron Dev. , vol.43 , Issue.6
    • Huang, A.Q.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.