Fabrication of trench isolation and trench power MOSFETs in a smart power IC technology with a single trench unit process

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2009, Pages 224-226

  Kadow, Christoph ^a   Decker, Stefan ^a   Dibra, Donald ^a   Krischke, Norbert ^a   Lanzerstorfer, Sven ^b   Maier, Hubert ^b   Meyer, Thorsten ^a   Vannucci, Nicola ^b   Zink, Robert ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; POWER MOSFETS; PROCESS COSTS; SMART POWER IC; SPECIFIC-ON-RESISTANCE; TRENCH ISOLATION; TRENCH POWER MOSFET; UNIT PROCESS;

POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

MOSFET DEVICES;

EID: 77949981654     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2009.5158042     Document Type: Conference Paper

References (8)

1. th International Seminar on Power Semiconductors (ISPS'08), Prague, Czech Republic, Aug. 2008.
2. th International Seminar on Power Semiconductors (ISPS'08), Prague, Czech Republic, Aug. 2008.
3. M. Zundel, F. Hirler, and R. Lantier, "MOS Transistor Device with a locally maximum concentration region between the source region and the drain region," U.S. Patent 6 885 062, Apr. 26, 2005.
4. M. Zundel and F. Hirler, "MOS field plate trench transistor device," U.S. Patent 7 372 103, May 13, 2008.
5. Q. Wang, M. Li, Y. Sokolov, A. Black, H. Yilmaz, J. Mancelita, and R. Nanatad, "Power Trench MOSFET Devices on Metal Substrates," IEEE Electron Device Lett., vol. 29, no. 9, pp. 1040-1042, Sep. 2008.
6. th International Symposium on Power Semiconductor Devices and IC's (ISPSD '08), Orlando, FL, U.S.A., May 2008.
7. P. Moens, F. Bauwens, J. Baele, K. Vershinin, E. De Backer, E. Sankara Naranyanan, and M. Tack, "XtreMOS: The First Integrated Power Transistor Breaking the Silicon Limit," in IEDM Technical Digest (IEDM'06), San Franciso, CA, U.S.A., Dec. 2006.
8. th International Seminar on Power Semiconductors (ISPS'08), Prague, Czech Republic, Aug. 2008.