A fully realized 'field balanced' TrenchMOS technology

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2008, Pages 28-31

  Peake, Steven T ^a   Rutter, Phil ^a   Hodgskiss, Steve ^a   Gajda, Mark ^a   Irwin, Neil ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER NETWORKS; MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES;

INTERNATIONAL SYMPOSIUM; ON-STATE RESISTANCE; POWER SEMICONDUCTOR DEVICES;

SEMICONDUCTOR DEVICES;

EID: 51549113800     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2008.4538889     Document Type: Conference Paper

References (7)

1. G.E.J Koops et al., 'RESURF Stepped Oxide [RSO] MOSFET for 85V applications with record low resistance,' ISPSD04, pp 185-188
2. M.A.Gajda et al., 'Industrialization of RESURF Stepped Oxide Power Transistors,'ISPSD06, pp 109-112
3. P. Goarin et al., 'Split Gate RESURF Stepped Oxide for 25V applications with record low gate-drain charge', ISPSD07
4. MEDICI 2D and TSUPREM4 TMA Avant! Software
5. ST April 2007
6. NXP Internal Competitor Analysis, October 2007
7. Rene P. Zing, 'New Benchmark for RESURF, SOI, and Super Junction Power Devices.' ISPSD01; pp343-346