Power trench MOSFET devices on metal substrates

IEEE Electron Device Letters

Volumn 29, Issue 9, 2008, Pages 1040-1042

  Wang, Qi ^a   Li, Minhua ^a   Sokolov, Yuri ^a   Black, Arthur ^a   Yilmaz, Hamza ^a   Mancelita, Jan V ^a   Nanatad, Romel ^a  

^a FAIRCHILD SEMICONDUCTOR   (United States)

Author keywords

High energy efficiency; Low specific on resistance; Low transient thermal resistance; Silicon on metal (SOM); Substrate transfer

Indexed keywords

COMPUTER NETWORKS; COPPER; ELECTRON BEAM LITHOGRAPHY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; STRENGTH OF MATERIALS; SUBSTRATES; TECHNOLOGICAL FORECASTING; TECHNOLOGY; TECHNOLOGY TRANSFER;

HIGH ENERGY EFFICIENCY; LOW SPECIFIC ON-RESISTANCE; LOW TRANSIENT THERMAL RESISTANCE; SILICON-ON-METAL (SOM); SUBSTRATE TRANSFER;

MOSFET DEVICES;

EID: 50649111226     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000603     Document Type: Article

References (14)

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