Theoretical evaluation of maximum doping concentration, breakdown voltage and on-state resistance of field-plate compensated devices

IET Seminar Digest

Volumn 2008, Issue 2, 2008, Pages

  Pawel, Ilja ^a   Siemieniec, Ralf ^b   Born, Mathias ^b  

^a Infineon Technologies Austria AG ^*  (Austria)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

Charge compensation; Electric field; Impact ionisation; MOSFET

Indexed keywords

BREAKDOWN VOLTAGE; CHARGE COMPENSATION; DOPING CONCENTRATION; DOPING DENSITIES; IMPACT IONISATION; IONISATION; MOSFET; ON-STATE RESISTANCE; OPTIMAL VALUES; SMALL DEVICES; THEORETICAL EVALUATION;

ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC POTENTIAL; IMPACT IONIZATION; INTERNET SERVICE PROVIDERS; MOSFET DEVICES; POWER ELECTRONICS;

SEMICONDUCTOR DOPING;

EID: 67650513842     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ic:20080183     Document Type: Conference Paper

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