Microstructural investigation of ZnO films grown on (1 1 1) Si substrates by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 312, Issue 9, 2010, Pages 1557-1562

  Mo Yang, Sang ^a   Kyu Han, Seok ^a   Wook Lee, Jae ^b   Kim, Jung Hyun ^a   Goo Kim, Jae ^a   Hong, Soon Ku ^a   Yong Lee, Jeong ^b   Song, Jung Hoon ^c   Ig Hong, Sun ^a   Sub Park, Jin ^d   Yao, Takafumi ^d  

^a Chungnam National University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Kongju National University   (South Korea)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Characterization; A3. Molecular beam epitaxy; B1. Oxides; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

A1. CHARACTERIZATION; A3. MOLECULAR BEAM EPITAXY; B1. OXIDES; B2. SEMICONDUCTING II-VI MATERIALS; SEMICONDUCTING II-VI MATERIALS;

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; HIGH ENERGY ELECTRON DIFFRACTION; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OXIDATION; OXYGEN; PHASE INTERFACES; PLASMA DEPOSITION; PLASMAS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SILICON; SULFUR COMPOUNDS; TRANSITION METAL COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; ZINC; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77949918050     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.01.048     Document Type: Article

References (16)

1. Nakahara K., Takasu H., Fons P., Yamada A., Iwata K., Matsubara K., Hunger R., and Niki S. Appl. Phys. Lett. 79 (2001) 4139
2. Chen J., and Fujita T. Jpn. J. Appl. Phys. 42 (2003) 602
3. Tsukazaki A., Kubota M., Ohtomo A., Onuma T., Ohtani K., Ohno H., Chichibu S.F., and Kawasaki M. Jpn. J. Appl. Phys. 44 (2005) L643
4. Jiao S.J., Zhang Z.Z., Lu Y.M., Shen D.Z., Yao B., Zhang J.Y., Li B.H., Zhao D.X., Fan X.W., and Tang Z.K. Appl. Phys. Lett. 88 (2006) 031911
5. Aoki T., Shimizu Y., Miyake A., Nakamura A., Nakanishi Y., and Hatanaka Y. Phys. Status Solidi (B) 229 (2002) 911
6. Smith T.P., McLean H., Smith David.J., and Davis R.F. J. Cryst. Growth 265 (2004) 390
7. Chen Y.F., Ko H.J., Hong S.K., and Yao T. Appl. Phys. Lett. 76 (2000) 559
8. Ohtomo A., Tamura K., Saikusa K., Takahashi K., Makino T., Segawa Y., Koinuma H., and Kawasaki M. Appl. Phys. Lett. 75 (1999) 2635
9. Vispute R.D., Talyansky V., Choopun S., Sharma R.P., Venkatesan T., He M., Tang X., Halpern J.B., Spencer M.G., Li Y.X., Salamanca-Riba L.G., Iliadis A.A., and Jones K.A. Appl. Phys. Lett. 73 (1998) 348
10. Iwata K., Fons P., Niki S., Yamada A., Matsubara K., Nakahara K., Tanabe T., and Takasu H. J. Cryst. Growth 214/215 (2000) 50
11. Choi J.H., Tabata H., and Kawai T. J. Cryst. Growth 226 (2001) 493
12. Fujita M., Kawamoto N., Tatsumi T., Yamagishi K., and Horikoshi Y. Jpn. J. Appl. Phys. 42 (2003) 67
13. Kawamoto N., Fujita M., Tatsumi T., and Horikoshi Y. Jpn. J. Appl. Phys. 42 (2003) 7209
14. Wang X.N., Wang Y., Mei Z.X., Dong J., Zeng Z.Q., Yuan H.T., Zhang T.C., Du X.L., Jia J.F., Xue Q.K., Zhang X.N., Zhang Z., Li Z.F., and Lu W. Appl. Phys. Lett. 90 (2007) 151912
15. Nakanishi Y., Miyake A., Tatsuoka H., Kominami H., Kuwabara H., and Hatanaka Y. Appl. Surf. Sci. 244 (2005) 359
16. Lee K.H., Kwon Y.H., Ryu S.Y., Kang T.W., Jung J.H., Lee D.U., and Kim T.W. J. Cryst. Growth 310 (2008) 2977