The behavior of powder sublimation in the long-term PVT growth of SiC crystals

Journal of Crystal Growth

Volumn 312, Issue 9, 2010, Pages 1486-1490

  Liu, Xi ^a,b,c   Chen, Bo yuan ^a,b   Song, Li Xin ^a,c   Shi, Er Wei ^a   Chen, Zhi Zhan ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

A1. Computer simulation; A1. Growth model; A1. Heat transfer; A2. Single crystal growth; B1. Growth from vapor; B2. Semiconducting materials

Indexed keywords

A1. GROWTH MODEL; A1. HEAT TRANSFER; B2. SEMICONDUCTING MATERIALS; GROWTH FROM VAPORS; GROWTH MODELS; SEMICONDUCTING MATERIALS;

COMPUTATIONAL METHODS; COMPUTER SIMULATION; CRYSTAL GROWTH; CRYSTALLIZATION; GRAIN BOUNDARIES; HEAT EXCHANGERS; HEAT TRANSFER; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SINGLE CRYSTALS; SUBLIMATION; VAPORS;

MASS TRANSPORTATION;

EID: 77949916348     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.01.029     Document Type: Article

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