Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 9-12

  Wellmann, P J ^a   Herro, Z ^a   Selder, M ^a   Durst, F ^a   Pusche R ^a   Hundhausen, M ^a   Ley, L ^a   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Physical Vapor Transport Growth; Raman Spectroscopy; Si13C; Source Material; X Ray Imaging

Indexed keywords

IMAGING TECHNIQUES; NUMERICAL METHODS; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS; SUBLIMATION;

PHYSICAL VAPOR TRANSPORT (PVT) TECHNIQUES;

SILICON CARBIDE;

EID: 0141858874     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (6)

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