Stress relaxation in GaN by transfer bonding on Si substrates

Applied Physics Letters

Volumn 91, Issue 25, 2007, Pages

  Hsu, S C ^a   Pong, B J ^b   Li, W H ^a   Beechem III, Thomas E ^c   Graham, Samuel ^c   Liu, C Y ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTOR QUANTUM WELLS; STRESS RELAXATION; SUBSTRATES;

BONDING LAYERS; BONDING THICKNESS; MICRO-RAMAN SCATTERING; TRANSFER BONDING;

GALLIUM NITRIDE;

EID: 37549021846     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2821224     Document Type: Article

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