Ga, N solubility limit in co-implanted ZnO measured by secondary ion mass spectrometry

Applied Surface Science

Volumn 189, Issue 3-4, 2002, Pages 349-352

  Komatsu, Manabu ^a   Ohashi, Naoki ^a   Sakaguchi, Isao ^a   Hishita, Shunichi ^a   Haneda, Hajime ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Ion implantation; SIMS; Solubility limit; The p type zinc oxide

Indexed keywords

ANNEALING; GALLIUM; ION IMPLANTATION; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SOLUBILITY; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

SOLUBILITY LIMITS;

SINGLE CRYSTALS;

EID: 0037188074     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)01026-1     Document Type: Conference Paper

References (15)