Structural and electrical characteristics of a high- k NdTi O3 gate dielectric

Applied Physics Letters

Volumn 91, Issue 17, 2007, Pages

  Pan, Tung Ming ^a   Shu, Wei Hao ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; HYSTERESIS; INTERFACES (MATERIALS); NEODYMIUM COMPOUNDS; SPUTTER DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRICS DEPOSITED; ELECTRICAL CHARACTERISTICS; INTERFACE TRAP DENSITY; NEODYMIUM TITANIUM OXIDE (NDTI O3);

GATE DIELECTRICS;

EID: 35549003592     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2800307     Document Type: Article

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