Thermoelectric figure of merit of metal-semiconductor barrier structure based on energy relaxation length

Applied Physics Letters

Volumn 73, Issue 13, 1998, Pages 1895-1897

  Moyzhes, B ^a   Nemchinsky, V ^b  

^a STANFORD UNIVERSITY   (United States)

^b ESAB Welding and Cutting   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000196816     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122318     Document Type: Article

References (7)

1. C. Wood, Rep. Prog. Phys. 51, 459 (1988).
2. L. D. Hicks and M. S. Dresselhaus, Phys. Rev. B 47, 12727 (1993).
3. L. D. Hicks, T. C. Harman, X. Sun, and M. S. Dresselhaus, Proceedings of the 15th International Conference on Thermoelectrics, IEEE, Pasadena, CA, 1996, pp. 450-453.
4. R. Venkatasurbramanian, T. Colpits, E. Watko, and J. Hutchby, Proceedings of the 15th International Conference on Thermoelectrics, IEEE, Pasadena, CA, 1996, pp. 454-458.
5. B. Ya. Moyzhes and V. A. Nemchinsky, Report on the XI International Conference on Thermoelectrics, IEEE, Arlington, TX, October 1992, pp. 232-235.
6. A. Shakouri and J. Bowers, Appl. Phys. Lett. 71, 1234 (1997).
7. C. Herring, J. Appl. Phys. 31, 1939 (1960).