Development of pit-defect free smooth a-plane GaN surfaces on r-plane sapphire using metalorganic chemical vapor deposition: A growth mechanism study

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1792-1797

  Jindal, Vibhu ^a   Grandusky, James ^a   Jamil, Muhammad ^a   Irissou, Eric ^a   Sandvik, Fatemeh Shahedipour ^a   Matocha, Kevin ^b   Tilak, Vinayak ^b  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MORPHOLOGICAL STUDY; PIT DEFECTS; QUALITATIVE GROWTH MECHANISM; SAPPHIRE SUBSTRATES; 61.10.NZ; 68.37.PS; 68.55.JK; 81.05.EA; 81.15.GH;

ATOMIC FORCE MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; DEFECTS; SEMICONDUCTING SAMARIUM COMPOUNDS;

GALLIUM NITRIDE;

EID: 33746332974     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565343     Document Type: Conference Paper

References (26)

1. S. Nakamura, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys. 30, L1708 (1991).
2. S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, J. Appl. Phys. 31, L139 (1992).
3. A. Khan, A. Bhattarai, J. N. Kuznia, and D. T. Oison, Appl. Phys. Lett. 63, 1214 (1993).
4. S. Nakamura, The Blue Laser Diodes, 2nd ed. (Springer-Verlag, 2000).
5. L. F. Eastman, phys. stat. sol. (a) 176, 175 (1999).
6. V. A. Dimitriev, K. G. Irvine, C. H. Carter, Jr., N. I. Kuznetsov, and E. V. Kalinina, Appl. Phys. Lett. 68, 229 (1996).
7. B. Gelmont, K. Kim, and M. Shur, J. Appl. Phys. 74, 1818 (1993).
8. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. 56, R10024 (1997).
9. F. Bernardini and V. Fiorentini, phys. stat. sol. (a) 190, 65 (2002).
10. M. Kalafi and A. Asgari, Physica E 19, 321 (2003).
11. A. Bykhovski, B. Gelmont, M. Shur, and A. Khan, J. Appl. Phys. 77, 1616 (1995).
12. Jin Seo Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, Phys. Rev. B 57, R9435 (1998).
13. R. Langer, J. Simon, V. Ortiz, N. T. Pelekanos, A. Barski, R. Andre, and M. Godlewski, Appl. Phys. Lett. 74, 3827 (1999).
14. P. Lefebvre, J. Allegre, B. Gil, H. Mathieu, N. Grandjean, M. Leroux, and J. M. P. Bigenwald, Phys. Rev. B. 59, 15363 (1999).
15. T. Takeuchi, Ch. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, and N. Yamada, Appl. Phys. Lett. 73, 1691 (1998).
16. P. Lefebvre, A. Morel, M. Gallart, T. Taliercio, J. Allegre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, and J. Massies, Appl. Phys. Lett. 78, 1252 (2001).
17. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, phys. stat. sol. (a) 194(2), 541 (2002).
18. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81, 469 (2002).
19. D. S. Li, H. Chen, H. B. Yu, X. H. Zheng, Q. Huang, and J. M. Zhou, J. Cryst. Growth 265, 107 (2004).
20. T. Lei, K. F. Ludwig, Jr., and T. D. Moustakas, J. Appl. Phys. 74, 4430 (1993).
21. C. R. Eddy, Jr., T. D. Moustakas, and J. Scanlon, J. Appl. Phys. 73, 448 (1993).
22. Chien Jen Sun and M. Razeghi, Appl. Phys. Lett. 63, 973 (1993).
23. Changqing Chen, Jinwei Yang, Hongmei Wang, Jianping Zhang, V. Adivarahan, M. Gaevski, E. Kuokstis, Zheng Gong, Ming Su, and M. Asif Khan, J. Appl. Phys. 42, L 640 (2003).
24. Changqing Chen, Jianping Zhang, Jinwei Yang, V. Adivarahan, Shiva Rai, Shuai Wu, Hongmei Wang, Wenhong Sun, Ming Su, Zheng Gong, E. Kuokstis, M. Gaevski, and M. Asif Khan, J. Appl. Phys. 42, L818 (2003).
25. Feng Wu, M. D. Craven, Sung-Hwan Lim, and J. S. Speck, J. Appl. Phys. 94, 942 (2003).
26. Hongmei Wang, Changqing Chen, Zheng Gong, Jianping Zhang, M. Gaevski, Ming Su, Jinwei Yang, and M. Asif Khan, Appl. Phys. Lett. 81, 499 (2004).