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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2540-2543

Direct growth of a-plane GaN on r-plane sapphire substrate by metalorganic vapor phase epitaxy

(3) Araki, Masahiro a Hoshino, Katsuyuki a Tadatomo, Kazuyuki a

a YAMAGUCHI UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; BUFFER LAYERS; DIRECT GROWTH; FLAT SURFACES; GAN ISLANDS; GROWTH CONDITIONS; HIGH-DENSITY; HIGH-TEMPERATURE GROWTH; INITIAL STAGES; LATERAL GROWTH RATE; METAL-ORGANIC VAPOR PHASE EPITAXY; NITRIDE SEMICONDUCTORS; NON-POLAR; PLANE SAPPHIRE; SURFACE MORPHOLOGIES; V/III RATIO;

CORUNDUM; CRYSTAL GROWTH; CRYSTALS; ECOLOGY; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SUBSTRATES; VAPORS;

GALLIUM ALLOYS;

EID: 49749104255 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200674829 Document Type: Conference Paper

Times cited : (5)

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