Au-catalyst-free epitaxy of InAs nanowires

Journal of Crystal Growth

Volumn 312, Issue 8, 2010, Pages 1391-1395

  Forbes, David ^a   Hubbard, Seth ^a   Raffaelle, Ryne ^a   McNatt, Jeremiah S ^b  

^a ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; B1. InAs; B1. Nanomaterials; B2. Semiconducting III V materials

Indexed keywords

B2. SEMICONDUCTING III-V MATERIALS; INAS; METAL-ORGANIC VAPOR PHASE EPITAXY; NANO-MATERIALS; SEMI CONDUCTING III-V MATERIALS;

CRYSTAL GROWTH; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM ARSENIDE; GOLD; METALLORGANIC VAPOR PHASE EPITAXY; NANOPARTICLES; NANOSTRUCTURED MATERIALS; NANOWIRES; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SUBSTRATES; VAPORS;

ELECTRIC WIRE;

EID: 77949583159     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.12.009     Document Type: Article

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