High-performance solution-deposited ambipolar organic transistors based on terrylene diimides

Chemistry of Materials

Volumn 22, Issue 6, 2010, Pages 2120-2124

  Liu, Chuan ^a   Liu, Zhihong ^c   Lemke, Henrik T ^d   Tsao, Hoi Nok ^c   Naber, Ronald C G ^e   Li, Yun ^b   Banger, Kulbinder ^a   Müllen, Klaus ^c   Nielsen, Martin M ^d,f   Sirringhaus, Henning ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b NANJING UNIVERSITY   (China)

^c MAX PLANCK INSTITUTE FOR POLYMER RESEARCH   (Germany)

^d UNIVERSITY OF COPENHAGEN   (Denmark)

^e TNO   (Netherlands)

^f TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; AMBIPOLAR TRANSPORT; BENZOCYCLOBUTENE; CHARGE TRANSPORT; FIELD-EFFECT MOBILITIES; GATE DEVICES; MOLECULAR SEMICONDUCTORS; ORGANIC TRANSISTOR; PERYLENES; TERRACE STRUCTURE; TERRYLENE; THERMAL-ANNEALING; TOP-GATE;

ATOMIC FORCE MICROSCOPY; BUTENES; ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); HOLE MOBILITY; INTERCHANGES; SOIL CONSERVATION; THIN FILM TRANSISTORS; X RAY DIFFRACTION;

X RAY DIFFRACTION ANALYSIS;

EID: 77949547422     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm902925g     Document Type: Article

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