Electron mobility increase in submicronic transistors integrated on ultrathin silicon membranes subjected to high mechanical stress

Applied Physics Letters

Volumn 96, Issue 9, 2010, Pages

  Bercu, Bogdan ^a   Mont̀s, Laurent ^a   Rochette, Florent ^a   Mouis, Mireille ^a   Xin, Xu ^a   Morfouli, Panagiota ^a  

^a IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MEMBRANES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; STRAINED SILICON; SUBSTRATES;

BENDING METHODS; CONVENTIONAL METHODS; FULLY DEPLETED SILICON-ON-INSULATOR; MECHANICAL STRESS; MEMBRANE THICKNESS; THICK MEMBRANES; TRANSISTOR CHANNELS; ULTRATHIN SILICON MEMBRANE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77949388903     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3343348     Document Type: Article

References (14)

1. F. Rochette, M. Casś, M. Mouis, A. Haziot, T. Pioger, G. Ghibaudo, and F. Boulanger, Solid-State Electron. SSELA5 0038-1101 53, 392 (2009). 10.1016/j.sse.2009.01.017
2. S. Thompson, N. Anand, M. Armstrong, C. Auth, B. Arcot, M. Alavi, P. Bai, J. Bielefeld, R. Bigwood, J. Brandenburg, M. Buehler, S. Cea, V. Chikarmane, C. Choi, R. Frankovic, T. Ghani, G. Glass, W. Han, T. Hoffmann, M. Hussein, P. Jacob, A. Jain, C. Jan, S. Joshi, C. Kenyon, J. Klaus, S. Klopcic, J. Luce, Z. Ma, B. Mcintyre, K. Mistry, A. Murthy, P. Nguyen, H. Pearson, T. Sandford, R. Schweinfurth, R. Shaheed, S. Sivakumar, M. Taylor, B. Tufts, C. Wallace, P. Wang, C. Weber, and M. Bohr, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2002, 61.
3. T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson, and M. Bohr, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2003, 11.6.1.
4. K. Rim, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2003, 3.1.1.
5. F. Rochette, M. Casś, M. Mouis, G. Reimbold, D. Blachier, C. Leroux, B. Guillaumot, and F. Boulanger, Solid-State Electron. SSELA5 0038-1101 51, 1458 (2007). 10.1016/j.sse.2007.09.031
6. A. T. Bradley, R. C. Jaeger, J. C. Suhling, and K. J. O'Connor, IEEE Trans. Electron Devices IETDAI 0018-9383 48, 2009 (2001). 10.1109/16.944190
7. B. Bercu, X. Xu, L. Mont̀s, and P. Morfouli, Microelectron. Eng. MIENEF 0167-9317 86, 1303 (2009). 10.1016/j.mee.2009.01.005
8. X. Xu, B. Bercu, F. Lime, and L. Montes, Microelectron. Eng. MIENEF 0167-9317 87, 406 (2010). 10.1016/j.mee.2009.07.018
9. S. Suthram, J. C. Ziegert, T. Nishida, and S. E. Thompson, IEEE Electron Device Lett. EDLEDZ 0741-3106 28, 58 (2007). 10.1109/LED.2006.887939
10. S. Renard, J. Micromech. Microeng. JMMIEZ 0960-1317 10, 245 (2000). 10.1088/0960-1317/10/2/323
11. C. S. Smith, Phys. Rev. PRVAAH 0096-8250 94, 42 (1954). 10.1103/PhysRev.94.42
12. O. N. Tufte and E. L. Stelzer, Phys. Rev. PRVAAH 0096-8250 133, A1705 (1964). 10.1103/PhysRev.133.A1705
13. Y. Kanda, IEEE Trans. Electron Devices IETDAI 0018-9383 29, 64 (1982). 10.1109/T-ED.1982.20659
14. A. Bosseboeuf, P. Nerin, P. Vabre, S. Petitgrand, and R. Yahiaoui, Proc. SPIE PSISDG 0277-786X 4400, 36 (2001). 10.1117/12.445603