Metal-Ferroelectric-Semiconductor Field Effect Transistor (MFS-FET) for 1T-type FRAM based on Polyvinylidene Fluoride (PVDF) thin film

Ferroelectrics

Volumn 379, Issue 1 PART 2, 2009, Pages 22-29

  Kim, Jeong Hwan ^a   Park, Byung Eun ^a  

^a University of Seoul   (South Korea)

Author keywords

FeRAM; Memory window; MFSFET; PVDF; Spin coating

Indexed keywords

DRAIN VOLTAGE; FERROELECTRIC LAYERS; FERROELECTRIC RANDOM ACCESS MEMORIES; GATE VOLTAGES; HYSTERETIC CURVE; LOW-VOLTAGE; MEMORY WINDOW; METALFERROELECTRIC-SEMICONDUCTOR; ORGANIC MATERIALS; POLYVINYLIDENE FLUORIDES; PVDF FILMS; SI(1 0 0);

COATINGS; DIELECTRIC MATERIALS; DRAIN CURRENT; FERROELECTRIC DEVICES; FERROELECTRIC FILMS; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SPIN DYNAMICS; THIN FILM DEVICES; THIN FILMS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77749292234     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190902847893     Document Type: Conference Paper

References (19)

1. L. Moll and Y. Tarui, IEEE Trans. Electron Devices, ED-10, 333 (1963).
2. J. P. Han and T. P. Ma, Appl. Phys. Lett., 72, 1185 (1998).
3. B. E. Park and H. Ishiwara, Appl. Phys. Lett., 79, 806 (2001).
4. B. E. Park and H. Ishiwara, Ferroelectrics., 293, 145 (2003).
5. S. Sakai and R. Ilangoovan, IEEE Electron Devices Lett, 25, 369 (2004).
6. B. E. Park, K. Takahashi, and H. Ishiwara, Appl. Phys. Lett., 85, 4448 (2004).
7. M. Takahashi and S. Sakai, Jpn. J. Appl. Phys., 44, L800 (2005).
8. K. Takahashi, K. Aizawa, B. E. Park, and H. Ishiwara, Jpn. J. Appl. Phys., 44, 6218 (2005).
9. J. H. Kim, D. W. Kim, H. S. Jeon, and B. E. Park, Jpn. J. Appl. Phys., 46, 6676 (2007).
10. J. H. Kim, J. N. Kim, and B. E. Park , J. Korean Phys. Soc. 51, 723 (2007).
11. T. Furukawa, Phase Transition, 18, 143 (1989).
12. D. W. Kim, G. G. Lee, and B. E. Park, J. Korean Phys. Soc., 51, 719 (2007)
13. R. C. G. Naber, J. Massolt, M. Spijkman, K. Asadi, and P. W. M. Blom, Appl. Phys. Lett., 90, 113509 (2007)
14. S. Fujisaki, Y. Fujisaki, and H. Ishiwara, Appl. Phys. Lett. 90, 162902 (2007)
15. S. J. Kang, Y. J. Park, J. Y. Hwang, H. J. Jeong, J. S. Lee, K. J. Kim, H. C. Kim, J. Huh, and C. M. Park, Adv. Mater. 19, 581 (2007).
16. S. J. Kang, Y. J. Park, J. W. Sung, P. S. Jo, C. M. Park, K. J. Kim, and B. O. Cho, Appl. Phys. Lett., 92, 012921 (2008).
17. H. D. Keith, and F. J. Jr. Padden, J. Appl. Phys., 35, 1270 (1964)
18. A. J. Lovinger, Science, 220, 1115 (1983).
19. M. W. J. Prins, S. E. Zinnemers, J. F. Cillessen, and J. B. Giesbers, Appl. Phys. Lett., 70, 458 (1997).