Formation of (Bi,La)4Ti3O12 films on Si(100) substrates using LaAlO3 buffer layers

Ferroelectrics

Volumn 293, Issue , 2003, Pages 145-152

  Park, Byung Eun ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

(Bi,La)4Ti3O12; LaAlO3; MBD; MFIS structure 7755+f; Sol gel

Indexed keywords

BISMUTH COMPOUNDS; DIODES; FERROELECTRIC MATERIALS; LANTHANUM COMPOUNDS; RAPID THERMAL ANNEALING; SOL-GELS;

(BI,LA)4TI3O12; BUFFER LAYERS; FERROELECTRIC FILMS; LAALO3; MFIS STRUCTURE 7755+F; MOLECULAR BEAM DEPOSITION (MBD);

THIN FILMS;

EID: 33746305332     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190390238342     Document Type: Conference Paper

References (10)

1. D. H. Looney, U.S. Patent 2791758 (1957).
2. B.-E. Park and H. Ishiwara, Appl. Phys. Lett. 79, 806 (2001).
3. B.-E. Park, S. Shouriki, E. Tokumitsu, and H. Ishiwara, Jpn. J. Appl. Phys. 37, 5145 (1998).
4. H. Ishiwara, Mater. Res. Soc. Symp. Proc. 596, 427 (2000).
5. A. A Molodyk, I. E. Korsakov, M. A. Novojilov, I. E. Graboy, A. R. Kaul, and G. Wahl, Chem. Vap. Deposition. 6, 133 (2000).
6. A. E. Lee, C. E. Platt, J. F. Burch, R. W. Simon, J. P. Goral, and M. M. Al-Jassim, Appl. Phys. Lett. 57, 2019 (1990).
7. J. H. Takemoto, C. M. Jackson, R. Hu, J. F. Burch, K. P. Daly, and R. W. Simon, IEEE Trans. Magne. 27, 2549 (1991).
8. E. A. Giess, R. L. Sandstrom, W. J. Gallagher, A. Gupta, S. L. Shinde, R. F. Cook, E. I. Cooper, E. J. M. O'Sullivan, J. M. Roldan, A. P. Segmller, and J. Angilello, IBM J. Res. Develop. 34, 916 (1990).
9. B.-E. Park and H. Ishiwara, Integr. Ferroelectr. 40, 201 (2001).
10. S. E. Cummins and L. E. Wahl, J. Appl. Phys. 39, 2268 (1968).