Coulomb blockade in a Si channel gated by an Al single-electron transistor

Applied Physics Letters

Volumn 91, Issue 14, 2007, Pages

  Sun, L ^a   Brown, K R ^a,b   Kane, B E ^a  

^a LABORATORY FOR PHYSICAL SCIENCES   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CONDUCTANCE; ELECTROSTATIC MODELS; GATE VOLTAGE; SINGLE ELECTRON TRANSISTORS;

CHANNEL ESTIMATION; COULOMB BLOCKADE; ELECTROSTATICS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 34948891153     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2793712     Document Type: Article

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