Scanning tunneling microscope study of striated carbon ridges in few-layer epitaxial graphene formed on 4H-silicon carbide (000̄1)

Applied Physics Letters

Volumn 96, Issue 8, 2010, Pages

  Harrison, S E ^a   Capano, M A ^a   Reifenberger, R ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

4H SILICON CARBIDE; BENDING MODULI; EPITAXIAL GRAPHENE; EXTERIOR SURFACES; GRAPHENE LATTICES; IN-PLANE STRESS; OUT-OF-PLANE DISTORTIONS; SCANNING TUNNELING MICROSCOPES;

GRAPHITE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SURFACE DEFECTS; WIND TUNNELS;

GRAPHENE;

EID: 77749246156     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3323092     Document Type: Article

References (37)

1. V. M. Pereira and A. H. Castro Neto, Phys. Rev. Lett. PRLTAO 0031-9007 103, 046801 (2009). 10.1103/PhysRevLett.103.046801
2. A. J. Van Bommel, J. E. Crombeen, and A. Van Tooren, Surf. Sci. SUSCAS 0039-6028 48, 463 (1975). 10.1016/0039-6028(75)90419-7
3. I. Forbeaux, J. M. Themlin, and J. M. Debeveret, Phys. Rev. B PRBMDO 0163-1829 58, 16396 (1998). 10.1103/PhysRevB.58.16396
4. E. Rollings, G. -H. Gweon, S. Y. Zhou, B. S. Mun, J. L. McChesney, B. S. Hussain, A. V. Fedorov, P. N. First, W. A. de Heer, and A. Lanzara, J. Phys. Chem. Solids JPCSAW 0022-3697 67, 2172 (2006). 10.1016/j.jpcs.2006.05.010 (Pubitemid 44310720)
5. J. Hass, W. A. de Heer, and E. H. Conrad, J. Phys.: Condens. Matter JCOMEL 0953-8984 20, 323202 (2008). 10.1088/0953-8984/20/32/323202
6. R. M. Tromp and J. B. Hannon, Phys. Rev. Lett. PRLTAO 0031-9007 102, 106104 (2009). 10.1103/PhysRevLett.102.106104
7. U. Starke and C. Riedl, J. Phys.: Condens. Matter JCOMEL 0953-8984 21, 134016 (2009). 10.1088/0953-8984/21/13/134016
8. M. L. Bolen, S. E. Harrison, L. B. Biedermann, and M. A. Capano, Phys. Rev. B PRBMDO 0163-1829 80, 115433 (2009). 10.1103/PhysRevB.80.115433
9. T. Ohta, F. El Gabaly, A. Bostwick, J. L. McChesney, K. V. Emtsev, A. K. Schmid, T. Seyller, K. Horn, and E. Rotenberg, New J. Phys. NJOPFM 1367-2630 10, 023034 (2008). 10.1088/1367-2630/10/2/023034
10. H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, and H. Yamaguchi, Phys. Rev. B PRBMDO 0163-1829 77, 075413 (2008). 10.1103/PhysRevB.77. 075413
11. J. A. Robinson, M. Wetherington, J. L. Tedesco, P. M. Campbell, X. Weng, J. Stitt, M. A. Fanton, E. Frantz, D. Snyder, B. L. VanMil, G. G. Jernigan, R. L. Myers-Ward, C. R. Eddy, Jr., and D. K. Gaskill, Nano Lett. NALEFD 1530-6984 9, 2873 (2009). 10.1021/nl901073g
12. K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, and H. L. Stormer, Solid State Commun. SSCOA4 0038-1098 146, 351 (2008). 10.1016/j.ssc.2008.02.024
13. J. L. Tedesco, B. L. VanMil, R. L. Meyers-Ward, J. M. McCrate, S. A. Kitt, P. M. Campbell, G. G. Jernigan, J. C. Culbertson, C. R. Eddy, Jr., and D. K. Gaskill, Appl. Phys. Lett. APPLAB 0003-6951 95, 122102 (2009). 10.1063/1.3224887
14. T. Shen, J. J. Gu, M. Xu, Y. Q. Wu, M. L. Bolen, M. A. Capano, L. W. Enel, and P. D. Ye, Appl. Phys. Lett. APPLAB 0003-6951 95, 172105 (2009). 10.1063/1.3254329
15. L. Biedermann, M. L. Bolen, M. A. Capano, D. Zemlyanov, and R. Reifenberger, Phys. Rev. B PRBMDO 0163-1829 79, 125411 (2009). 10.1103/PhysRevB.79.125411
16. F. Varchon, P. Mallet, L. Magaud, and J. Y. Veuillen, Phys. Rev. B PRBMDO 0163-1829 77, 165415 (2008). 10.1103/PhysRevB.77.165415
17. 2 samples were prepared by annealing nominally on-axis, semi-insulating 4H-SiC in an Epigress VP508 chemical vapor deposition reactor. The starting wafers were etched at 1500 °C for 10 min. in hydrogen at 150 mbar. After etching, the growth cell was pumped to a pressure of ∼5× 10-6 mbar, the samples were heated to 1100 °C under high vacuum for 3 min. and then ramped to specific growth temperatures at a rate of 10 °C/min. All samples were held at temperature for 10 min. and allowed to cool under vacuum.
18. Prior x-ray photoelectron spectroscopy studies indicate the thickness of the C-layer formed at 1475 °C is 1.8±0.1 nm thick (approximately five layers of graphene) while growth at 1500 °C produced FLG with a thickness of 2.4±0.2 nm (approximately seven layers of graphene). See Ref..
19. The STM studies were performed under dry nitrogen conditions using a cut Pt/Ir tip. Each sample was imaged for a period of approximately three or more days, taking ∼50 images per day. A Nanotec Electronica STM was used. The images were analyzed using WSxM software, version 4, develop 13.
20. I. Horcas, R. Fernandez, J. M. Gomez-Rodriguez, J. Colchero, J. Gomez-Herrero, and A. M. Baro, Rev. Sci. Instrum. RSINAK 0034-6748 78, 013705 (2007). 10.1063/1.2432410 (Pubitemid 46511822)
21. I. A. Nyapshaev, I. V. Makarenko, A. N. Titkov, A. V. Tyurnina, and A. N. Obraztsov, Phys. Solid State PSOSED 1063-7834 51, 1054 (2009). 10.1134/S1063783409050254
22. The striations are often not visible in dynamic AFM (dAFM) studies due to the inherent lower resolution of dAFM.
23. H. Hiura, T. W. Ebbesen, J. Fujita, K. Tanigaki, and T. Takada, Nature (London) NATUAS 0028-0836 367, 148 (1994). 10.1038/367148a0 (Pubitemid 24032993)
24. E. M. Kramer and T. A. Witten, Phys. Rev. Lett. PRLTAO 0031-9007 78, 1303 (1997). 10.1103/PhysRevLett.78.1303
25. The height constraint can be as simple as a rigid ceiling that restricts the ridge height to a fixed value. When a growing ridge continues to press against the ceiling, the ridge is further deformed into parallel ridges of constant height. These parallel ridges can have the appearance of striations that run parallel to the entire length of the original (unconstrained) ridge.
26. E. Cerda, K. Ravi-Chandar, and L. Mahadevan Nature (London) NATUAS 0028-0836 419, 579 (2002). 10.1038/419579b
27. J. C. Ǵminard, R. Bernal, and F. Melo, Eur. Phys. J. E EPJSFH 1292-8941 15, 117 (2004). 10.1140/epje/i2004-10041-1
28. A. F. Lobkovsky, S. Gentges, H. Li, D. Morse, and T. A. Witten, Science SCIEAS 0036-8075 270, 1482 (1995). 10.1126/science.270.5241.1482
29. A. F. Lobkovsky and T. A. Witten, Phys. Rev. E PLEEE8 1063-651X 55, 1577 (1997). 10.1103/PhysRevE.55.1577
30. S. Chaeb and F. Melo, J. Mech. Phys. Solids JMPSA8 0022-5096 48, 565 (2000). 10.1016/S0022-5096(99)00047-2 (Pubitemid 30562165)
31. G. A. Vliegenthart and G. Gompper, Nature Mater. NMAACR 1476-1122 5, 216 (2006). 10.1038/nmat1581 (Pubitemid 43320637)
32. M. Das, A. Vaziri, A. Kudrolli, and L. Mahadevan, Phys. Rev. Lett. PRLTAO 0031-9007 98, 014301 (2007). 10.1103/PhysRevLett.98.014301 (Pubitemid 46135089)
33. L. Pocivavsek, R. Dellsy, A. Kern, S. Johnson, B. Lin, K. Y. C. Lee, and E. Cerda, Science SCIEAS 0036-8075 320, 912 (2008). 10.1126/science.1154069 (Pubitemid 351934167)
34. M. Kuwabara, D. R. Clarke, and D. A. Smith, Appl. Phys. Lett. APPLAB 0003-6951 56, 2396 (1990). 10.1063/1.102906
35. W. T. Pong and C. Durkan, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 44, 5365 (2005). 10.1143/JJAP.44.5365 (Pubitemid 43182920)
36. W. T. Pong and C. Durkan, J. Phys. D JPAPBE 0022-3727 38, R329 (2005). 10.1088/0022-3727/38/21/R01 (Pubitemid 41545522)
37. d= (q-1) d′ =P; q=integer. Since 4.5 nm