Interband optical transitions of an InAs/InGaAs dots-in-a-well structure

Solid State Communications

Volumn 150, Issue 15-16, 2010, Pages 707-710

  Chen, Rui ^a   Liu, H Y ^b   Sun, H D ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

A. Quantum dots; D. Transition; E. Finite element analysis

Indexed keywords

DINGER EQUATION; DOTS IN A WELLS; ENVELOPE FUNCTIONS; FINITE ELEMENT ANALYSIS; INAS/INGAAS; INTERBAND; NOVEL MATERIAL SYSTEM; OPTICAL TRANSITION ENERGIES; OPTIMAL STRUCTURES; QUANTUM DOT; STRAIN EFFECT; TRANSITION ENERGY;

ELECTRONIC STRUCTURE; FINITE ELEMENT METHOD; GALLIUM; OPTICAL TRANSITIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77649341833     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.01.042     Document Type: Article

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