Numerical simulation of electronic properties of coupled quantum dots on wetting layers

Nanotechnology

Volumn 19, Issue 16, 2008, Pages

  Betcke, M M ^a   Voss, H ^b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; ELECTRONIC PROPERTIES; HAMILTONIANS; WETTING;

CONFINEMENT POTENTIAL; WETTING LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

ARSENIC; GALLIUM; NANOMATERIAL; QUANTUM DOT;

ARTICLE; ELECTRIC CONDUCTIVITY; ELECTRON; ELECTRONICS; ENERGY; GEOMETRY; MATHEMATICAL MODEL; NANOARRAY; PRIORITY JOURNAL; SIMULATION; STRUCTURE ANALYSIS; THREE DIMENSIONAL IMAGING; WETTABILITY;

EID: 42449101800     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/16/165204     Document Type: Article

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