Atomic diffusion in Cu/Si (111) and Cu/SiO2/Si (111) systems by neutral cluster beam deposition

Chinese Physics Letters

Volumn 25, Issue 4, 2008, Pages 1400-1402

  Cao, Bo ^a   Li, Gong Ping ^a   Chen, Xi Meng ^a   Cho, Seong Jin ^b   Kim, Hee ^b  

^a LANZHOU UNIVERSITY   (China)

^b Kyungsung University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COPPER; DIFFUSION IN SOLIDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; SILICIDES; SILICON; X RAY DIFFRACTION;

ANNEALING TEMPERATURES; ATOMIC DIFFUSIONS; CLUSTER BEAM DEPOSITION; COPPER SILICIDE; CU ATOMS; CU FILMS; NEUTRAL CLUSTERS; P-TYPE SI; SI (1 1 1); SI ATOMS;

ANNEALING;

EID: 43049128216     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/4/064     Document Type: Article

References (13)