Effect of indentation and annealing on 2 MeV Cu ion-implanted SiO2

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 257, Issue 1-2 SPEC. ISS., 2007, Pages 585-588

  Pan, Jin ^a,b   Wang, H ^b   Takeda, Y ^b   Umeda, N ^b   Kono, K ^b   Amekura, H ^b   Kishimoto, N ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Annealing; Ion implantation; Micro indentation; Silica; Surface plasmon resonance

Indexed keywords

COPPER COMPOUNDS; INDENTATION; ION IMPLANTATION; LIGHT ABSORPTION; RAPID THERMAL ANNEALING; SURFACE PLASMON RESONANCE;

ATOMIC MIGRATION; DUAL BEAM SPECTROMETER; MICRO-INDENTATION; POST ANNEALING;

SILICON COMPOUNDS;

EID: 33947709283     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.01.050     Document Type: Article

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