Understanding the behaviors of Cu during a post-gate-oxidation device process by using an isotope tracking analysis

Journal of the Korean Physical Society

Volumn 48, Issue 6, 2006, Pages 1548-1551

  Lee, Sung Wook ^a   Kim, Young Hun ^a   Kim, Kwang Salk ^a   Hong, Byung Seop ^a   Lee, Bo Young ^a  

^a LG Siltron Inc   (South Korea)

Author keywords

BMD; Cu; Diffusion; Gettering; Silicon dioxide; Silicon wafer

Indexed keywords

EID: 33746056849     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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